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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N-Channel -- Enhancement
2 GATE
1 DRAIN
BS107 BS107A
(R)
3 SOURCE
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate-Source Voltage -- Continuous -- Non-repetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 20 30 250 500 350 - 55 to 150 mW C Unit Vdc Vdc Vpk mAdc
1 2 3
CASE 29-04, STYLE 30 TO-92 (TO-226AA)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero-Gate-Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 Adc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) -- -- -- -- -- -- 4.5 4.8 28 14 6.0 6.4 -- 200 -- -- -- 0.01 30 -- 10 nAdc Vdc nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain-Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0 -- 3.0 Vdc Ohms
SMALL- SIGNAL CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) Ciss Crss Coss gfs -- -- -- 200 60 6.0 30 400 -- -- -- -- pF pF pF mmhos
SWITCHING CHARACTERISTICS
Turn-On Time Turn-Off Time ton toff -- -- 6.0 12 15 15 ns ns
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
v
v
REV 1
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997
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BS107 BS107A
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 50% 10% PULSE WIDTH 50%
OUTPUT Vout INVERTED 10 V INPUT Vin
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
10 VDS , DRAIN-SOURCE VOLTAGE (VOLTS)
200 180 VGS = 0 V
5.0 250 mA C, CAPACITANCE (pF) VGS = 10 V 2.0 1.0 100 mA 0.5 0.2 0.1 -55
160 140 120 100 80 60 40 20 -35 85 105 45 -15 +5.0 25 65 TJ, JUNCTION TEMPERATURE (C) 125 145 0 0 Crss Coss 40 10 20 30 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 50 Ciss
Figure 3. On Voltage versus Temperature
Figure 4. Capacitance Variation
0.8 ID(on) , DRAIN CURRENT (AMPS) VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE - SOURCE VOLTAGE (VOLTS) 9.0 10 I D(on) , DRAIN CURRENT (AMPS) 0.7
0.7 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 3.0 V 18 20 4.0 V 5.0 V
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BS107 BS107A
0.7 ID(on), DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 1.0 2.0 3.0 4.0 3.0 V 5.0 4.0 V 10 V 5.0 V
VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
Motorola Small-Signal Transistors, FETs and Diodes Device Data
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BS107 BS107A
PACKAGE DIMENSIONS
A R P
SEATING PLANE
B
F
L K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
XX G H V
1
D J C SECTION X-X N N
DIM A B C D F G H J K L N P R V
CASE 029-04 (TO-226AA) ISSUE AD
STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE
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BS107/D Motorola Small-Signal Transistors, FETs and Diodes Device Data

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